JAN1N5615US
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JAN1N5615US
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JAN1N5615US

Brand:Microchip
Model:JAN1N5615US
stock:34653
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥10.37
The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
Industry trends
Installation type Surface mount
packing bulk
series Military, MIL-PRF-19500/429
Part status On sale
Speed Rapid recovery=< 500ns,> 200mA(Io)
working temperature -
Encapsulation/Housing SQ-MELF,A
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
Supplier device packaging D-5A
Diode type standard
Voltage DC reverse (Vr) (maximum) 200 V
Current average rectification (Io) 1A
Voltage at different If - forward (Vf) 800 mV @ 3 A
Reverse recovery time (trr) 150 ns
Current - reverse leakage at different Vr 500 µA @ 200 V
Capacitance at different Vr and F -
Common problem
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